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MW6S004NT1
RF MOSFET Transistors HV6 1950MHZ 2W PLD1.5N
- Product Category: Transistors RF
- Mfr. Part # MW6S004NT1
- Manufacturer: NXP
- Package: Cut Tape/Reel
- Lead Free Status /RoHS Status:
- Data Sheet: MW6S004NT1 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
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Mfr. Part #: MW6S004NT1
- Specifications
- Product Details
Specifications
Product Details
1-2000 MHz, 4 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET
Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
• Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
Power Gain — 18 dBDrain Efficiency — 33%
IMD — -34 dBc
• Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — -39 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters• On-Chip RF Feedback for Broadband Stability
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MW6S004NT1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MW6S004NT1
