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MW6S010GNR1
RF MOSFET Transistors HV6 900MHZ 10W
- Product Category: RF MOSFET Transistors
- Mfr. Part # MW6S010GNR1
- Manufacturer: NXP
- Package: Cut Tape/Reel
- Lead Free Status /RoHS Status:
- Data Sheet: MW6S010GNR1 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: MW6S010GNR1
- Specifications
- Product Details
Specifications
Product Details
450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
• Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP
Power Gain — 18 dBDrain Efficiency — 32%
IMD — -37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters• On-Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
CASE 1265-08, STYLE 1 TO-270-2 PLASTIC MW6S010NR1(MR1)
CASE 1265A-02, STYLE 1 TO-270-2 GULL PLASTIC MW6S010GNR1(GMR1)
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MW6S010GNR1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MW6S010GNR1
