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MW7IC18100NBR1

IC PWR AMP RF LDMOS TO272-14

Product Category: RF Amplifiers
Mfr. Part #
MW7IC18100NBR1
Manufacturer: Freescale / NXP
Package: SMD
Lead Free Status /RoHS Status:
Data Sheet: MW7IC18100NBR1 Datasheet
Inventory: In Stock

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Mfr. Part #: MW7IC18100NBR1

Specifications
Product Details

Specifications

Manufacturer Freescale / NXP

Product Category RF Amplifiers

Series -

Packaging Package-Case

TO-272-14 Variant, Flat Leads Frequency

1.805GHz ~ 2.05GHz Voltage-Supply

24 V ~ 32 V Supplier-Device-Package

TO-272 WB-14 Current-Supply

1.18A Gain

30dB Test-Frequency

1.9GHz P1dB-Compression-Point

51.93dBm (155.955W) Noise-Figure

- RF-Type

Product Details

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.

Final Application

â€¢ Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA,Pout = 100 Watts CW, 1805-1880 MHz or 1930-1990 MHz
Power Gain 30 dB
Power Added Efficiency 48%

GSM EDGE Application

â€¢ Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 =800 mA, Pout = 40 Watts Avg., 1805-1880 MHz or 1930-1990 MHz
Power Gain 31 dB
Power Added Efficiency 35%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -80 dBc
EVM 1.5% rms
â€¢ Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power
â€¢ Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 120 W CW Pout.

Features

â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
â€¢ On-Chip Matching (50 Ohm Input, DC Blocked)
â€¢ Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
â€¢ Integrated ESD Protection
â€¢ 225Â°C Capable Plastic Package
â€¢ RoHS Compliant
â€¢ In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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Mfr. Part #: MW7IC18100NBR1