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MZ0912B50Y

RF Bipolar Transistors 960-1215MHz Gain 7dB NPN

  • RF Bipolar Transistors
  • MZ0912B50Y
  • Advanced Semiconductor, Inc.
  • Bulk
  • MZ0912B50Y Datasheet
  • In Stock
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Mfr. Part #: MZ0912B50Y

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  • Specifications
  • Product Details

Specifications

Manufacturer Advanced Semiconductor, Inc.
RoHS
Technology Si
Packaging Bulk
RF & Wireless RF Bipolar Transistors
Brand Advanced Semiconductor, Inc.
Product Type RF Bipolar Transistors
Standard Pack Qty 1
Subcategory Transistors

Product Details

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C.

FEATURES

• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Input and output matching cell allows an easier design of circuits.

APPLICATIONS

Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MZ0912B50Y. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MZ0912B50Y

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