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NE3503M04-T2-A

RF FET 12 dB + 125 C SMD/SMT 12 GHz FTSMM-4 (M04) GaAs N-Channel 4 V

  • RF FETs
  • NE3503M04-T2-A
  • NEC
  • SOT-343F
  • NE3503M04-T2-A Datasheet
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Mfr. Part #: NE3503M04-T2-A

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  • Specifications
  • Product Details

Specifications

Manufacturer NEC
Product Category RF FETs
Packaging Reel
Mounting-Style SMD/SMT
Package-Case FTSMM-4 (M04)
Technology GaAs
Transistor-Type HFET
Gain 12 dB
Pd-Power-Dissipation 125 mW
Maximum Operating Temperature + 125 C
Operating-Frequency 12 GHz
ID (drain current) 70 mA
Vds-Drain-Source-Breakdown-Voltage 4 V
Transistor-Polarity N-Channel
Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.
55 mS Vgs-Gate-Source-Breakdown-Voltage
- 3 V NF-Noise-Figure

Product Details

K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

FEATURES

• Super low noise figure and high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
• Micro-X ceramic (84C) package

APPLICATIONS

• 20 GHz-band DBS LNB
• Other K-band communication systems

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NE3503M04-T2-A. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: NE3503M04-T2-A

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