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NE3512S02-T1C-A

RF FET 13.5 dB + 125 C SMD/SMT 12 GHz S0-2 GaAs N-Channel 4 V

  • RF FETs
  • NE3512S02-T1C-A
  • NEC
  • 4-SMD, Flat Leads
  • NE3512S02-T1C-A Datasheet
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Mfr. Part #: NE3512S02-T1C-A

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  • Specifications
  • Product Details

Specifications

Manufacturer NEC
Product Category RF FETs
Packaging Reel
Mounting-Style SMD/SMT
Package-Case S0-2
Technology GaAs
Transistor-Type HFET
Gain 13.5 dB
Pd-Power-Dissipation 165 mW
Maximum Operating Temperature + 125 C
Operating-Frequency 12 GHz
ID (drain current) 70 mA
Vds-Drain-Source-Breakdown-Voltage 4 V
Transistor-Polarity N-Channel
Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.
55 mS Vgs-Gate-Source-Breakdown-Voltage
- 3 V NF-Noise-Figure

Product Details

X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET


FEATURES
• Super low noise figure and high associated gain
NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package

APPLICATIONS
• X to Ku-band DBS LNB
• Other X to Ku-band communication systems

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NE3512S02-T1C-A. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: NE3512S02-T1C-A

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