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NE3515S02-T1C-A

RF JFET Transistors Super Low Noise Pseudomorphic

  • Transistors RF
  • NE3515S02-T1C-A
  • CEL
  • Reel
  • NE3515S02-T1C-A Datasheet
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Mfr. Part #: NE3515S02-T1C-A

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  • Specifications
  • Product Details

Specifications

Manufacturer CEL
RoHS
Transistor Type pHEMT
Technology GaAs
Operating Frequency 12 GHz
Gain 12.5 dB
Vds - Drain-Source Breakdown Voltage 4 V
Vgs - Gate-Source Breakdown Voltage - 3 V
Id - Continuous Drain Current 88 mA
Maximum Operating Temperature + 125 C
Pd - Power Dissipation 165 mW
Mounting Style SMD/SMT
Package / Case S0-2
Packaging Reel
RF & Wireless RF JFET Transistors
Product RF JFET
Type GaAs pHEMT
Brand CEL
Forward Transconductance - Min 70 mS
NF - Noise Figure 0.3 dB
P1dB - Compression Point 14 dBm
Product Type RF JFET Transistors
Standard Pack Qty 2000
Subcategory Transistors

Product Details

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

FEATURES

• Super low noise figure, high associated gain and middle output power
NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)
• Micro-X plastic (S02) package

APPLICATIONS

• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer
• DBS LNB, VSAT
• Other X to Ku-band communication systems

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NE3515S02-T1C-A. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: NE3515S02-T1C-A

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