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NE3515S02-T1C-A
RF JFET Transistors Super Low Noise Pseudomorphic
- Product Category: Transistors RF
- Mfr. Part # NE3515S02-T1C-A
- Manufacturer: CEL
- Package: Reel
- Lead Free Status /RoHS Status:
- Data Sheet: NE3515S02-T1C-A Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
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Mfr. Part #: NE3515S02-T1C-A
- Specifications
- Product Details
Specifications
Product Details
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• Super low noise figure, high associated gain and middle output powerNF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer• DBS LNB, VSAT
• Other X to Ku-band communication systems
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NE3515S02-T1C-A. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: NE3515S02-T1C-A