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NE4210S01-T1B

RF FET 13 dB + 125 C SMD/SMT 12 GHz S0-1 GaAs N-Channel 4 V

Product Category: RF FETs
Mfr. Part #
NE4210S01-T1B
Manufacturer: NEC
Package: SO86
Lead Free Status /RoHS Status:
Data Sheet: NE4210S01-T1B Datasheet
Inventory: In Stock

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Mfr. Part #: NE4210S01-T1B

Specifications
Product Details

Specifications

Manufacturer NEC

Product Category RF FETs

Packaging Reel

Mounting-Style SMD/SMT

Package-Case S0-1

Technology GaAs

Transistor-Type HFET

Gain 13 dB

Pd-Power-Dissipation 165 mW

Maximum Operating Temperature + 125 C

Operating-Frequency 12 GHz

ID (drain current) 70 mA

Vds-Drain-Source-Breakdown-Voltage 4 V

Transistor-Polarity N-Channel

Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.

55 mS Vgs-Gate-Source-Breakdown-Voltage

- 3 V NF-Noise-Figure

Product Details

DESCRIPTION

The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

FEATURES

â€¢ Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
â€¢ Gate Length: Lg â‰¤ 0.20 Âµm
â€¢ Gate Width : Wg = 160 Âµm

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Mfr. Part #: NE4210S01-T1B