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NE662M04-T2-A

RF Bipolar Transistors NPN High Frequency

Product Category: RF Bipolar Transistors
Mfr. Part #
NE662M04-T2-A
Manufacturer: CEL
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: NE662M04-T2-A Datasheet
Inventory: In Stock

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Mfr. Part #: NE662M04-T2-A

Specifications
Product Details

Specifications

Manufacturer CEL

Transistor Type Bipolar

Technology Si

Transistor Polarity NPN

Operating Frequency 2 GHz

Collector- Emitter Voltage VCEO Max 3.3 V

Emitter- Base Voltage VEBO 1.5 V

Continuous Collector Current 35 mA

Minimum Operating Temperature - 65 C

Maximum Operating Temperature + 150 C

Configuration Single

Mounting Style SMD/SMT

Package / Case MiniMold-Flat-4

Packaging Reel

RF & Wireless RF Bipolar Transistors

DC Current Gain hFE Max 100

Height 0.59 mm

Length 2 mm

Type RF Bipolar Small Signal

Width 1.25 mm

Brand CEL

Gain Bandwidth Product fT 25 GHz

Pd - Power Dissipation 115 W

Product Type RF Bipolar Transistors

Standard Pack Qty 3000

Subcategory Transistors

Product Details

The NEC NE662M04-T2-A RF BJT is a high-performance transistor designed for use in RF applications. This device is a NPN type with a maximum collector current of 35mA and a maximum frequency of 25GHz. It has an excellent gain of 18dB and a power dissipation of 115mW. The NE662M04-T2-A is a surface mount device in a SOT-343F package and operates at a voltage of 3.3V. This device is ideal for use in high-frequency applications such as wireless communication, satellite communication, and radar systems. It is also suitable for use in low-noise amplifiers, oscillators, and mixers. The NE662M04-T2-A is a reliable and cost-effective solution for RF applications.

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Mfr. Part #: NE662M04-T2-A