wholesale NE664M04-T2-A RF Transistors (BJT) supplier,manufacturer,distributor

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NE664M04-T2-A

RF BJT 500mA 20GHz 12dB Surface Mount 735mW SOT-343F NPN 5V

  • RF Transistors (BJT)
  • NE664M04-T2-A
  • CEL
  • SOT-343F
  • NE664M04-T2-A Datasheet
  • In Stock
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Mfr. Part #: NE664M04-T2-A

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  • Specifications
  • Product Details

Specifications

Manufacturer CEL
Product Category RF Transistors (BJT)
Series -
Packaging Alternate Packaging
Part-Aliases 2SC5754-T2-A
Mounting-Style SMD/SMT
Package-Case SOT-343F
Technology Si
Mounting-Type Surface Mount
Supplier-Device-Package SOT-343F
Configuration Single
Power-Max 735mW
Transistor-Type NPN
Electric current collectors 500mA
Voltage-Collector-Emitter-Breakdown-Max 5V
DC-Current-Gain-hFE-Min-Ic-Vce 40 @ 100mA, 3V
Frequency-Transition 20GHz
Noise-Figure-dB-Typ-f -
Gain 12dB
Pd-Power-Dissipation 735 mW
Transistor-Polarity NPN
Continuous-Collector-Current 0.5 A

Product Details

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

FEATURES

• Ideal for 460 MHz to 2.4 GHz medium output power amplification
• PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
• High collector efficiency: ηC = 60%
• UHS0-HV technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold (M04) package

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NE664M04-T2-A. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: NE664M04-T2-A

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