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NE68119-T1-A

RF Bipolar Transistors NPN High Frequency

  • RF Bipolar Transistors
  • NE68119-T1-A
  • CEL
  • Reel
  • NE68119-T1-A Datasheet
  • In Stock
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Mfr. Part #: NE68119-T1-A

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  • Specifications
  • Product Details

Specifications

Manufacturer CEL
RoHS
Transistor Type Bipolar
Technology Si
Transistor Polarity NPN
Continuous Collector Current 65 mA
Configuration Single
Mounting Style SMD/SMT
Package / Case Ultra-Super-Minimold-3
Packaging Reel
RF & Wireless RF Bipolar Transistors
Height 0.75 mm
Length 1.6 mm
Type RF Bipolar Small Signal
Width 0.8 mm
Brand CEL
Pd - Power Dissipation 100 mW (1/10 W)
Product Type RF Bipolar Transistors
Standard Pack Qty 3000
Subcategory Transistors

Product Details

DESCRIPTION

The NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681s unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain.

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
12 dB at 2 GHz
• LOW COST

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NE68119-T1-A. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: NE68119-T1-A

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