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NE85630-T1-A

RF BJT 100mA 4.5GHz 9dB Surface Mount 150mW SOT-323 NPN 12V

Product Category: RF Transistors (BJT)
Mfr. Part #
NE85630-T1-A
Manufacturer: CEL
Package: SC-70, SOT-323
Lead Free Status /RoHS Status:
Data Sheet: NE85630-T1-A Datasheet
Inventory: In Stock

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Mfr. Part #: NE85630-T1-A

Specifications
Product Details

Specifications

Manufacturer CEL

Product Category RF Transistors (BJT)

Series -

Packaging Alternate Packaging

Part-Aliases 2SC4226-T1-A

Mounting-Style SMD/SMT

Package-Case SC-70, SOT-323

Technology Si

Mounting-Type Surface Mount

Supplier-Device-Package SOT-323

Configuration Single

Power-Max 150mW

Transistor-Type NPN

Electric current collectors 100mA

Voltage-Collector-Emitter-Breakdown-Max 12V

DC-Current-Gain-hFE-Min-Ic-Vce 40 @ 7mA, 3V

Frequency-Transition 4.5GHz

Noise-Figure-dB-Typ-f 1.2dB @ 1GHz

Gain 9dB

Pd-Power-Dissipation 150 mW

Transistor-Polarity NPN

Continuous-Collector-Current 0.1 A

Product Details

DESCRIPTION

NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base surface process. The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles.

FEATURES

â€¢ HIGH GAIN BANDWIDTH PRODUCT:
fT= 7 GHz
â€¢ LOW NOISE FIGURE:
1.1 dB at 1 GHz
â€¢ HIGH COLLECTOR CURRENT:100 mA
â€¢ HIGH RELIABILITY METALLIZATION
â€¢ LOW COST

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Mfr. Part #: NE85630-T1-A