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NESG3032M14

EVAL BOARD NESG3032M14

  • RF Evaluation and Development Kits, Boards
  • NESG3032M14
  • SOT343
  • NESG3032M14 Datasheet
  • In Stock
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Mfr. Part #: NESG3032M14

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  • Product Details

Product Details

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)

FEATURES

• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NESG3032M14. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: NESG3032M14

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