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NGTB25N120LWG

IGBT 50A Trench Field Stop Through Hole 192W NGTB25N120L TO-247 1200V

Product Category: IGBTs - Single
Mfr. Part #
NGTB25N120LWG
Manufacturer: onsemi
Package: TO-247-3
Lead Free Status /RoHS Status:
Data Sheet: NGTB25N120LWG Datasheet
Inventory: In Stock

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Mfr. Part #: NGTB25N120LWG

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category IGBTs - Single

Series NGTB25N120L

Packaging Tube

Unit-Weight 0.229281 oz

Mounting-Style Through Hole

Package-Case TO-247-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-247

Power-Max 192W

Reverse-Recovery-Time-trr -

Electric current collectors 50A

Voltage-Collector-Emitter-Breakdown-Max 1200V

IGBT-Type Trench Field Stop

Current-Collector-Pulsed-Icm 200A

Vce-on-Max-Vge-Ic 2.3V @ 15V, 25A

Switching-Energy 3.4mJ (on), 800Î¼J (off)

Total Gate Charge 200nC

Td-on-off-25Â°C 89ns/235ns

Test-Condition 600V, 25A, 10 Ohm, 15V

Pd-Power-Dissipation 77 W

Collector-Emitter-Voltage-VCEO-Max 1200 V

Collector-Emitter-Saturation-Voltage 2.3 V

Continuous-Collector-Current-at-25-C 50 A

Gate-Emitter-Leakage-Current 100 nA

Maximum-Gate-Emitter-Voltage 20 V

Product Details

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low onâˆ’state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged coâˆ’packaged free wheeling diode with a low forward voltage.

Features

â€¢ Low Saturation Voltage using Trench with Field Stop Technology
â€¢ Low Switching Loss Reduces System Power Dissipation
â€¢ Low Gate Charge
â€¢ 5 Î¼s Shortâˆ’Circuit Capability
â€¢ These are Pbâˆ’Free Devices

Typical Applications

â€¢ Inverter Welding Machines
â€¢ Microwave Ovens
â€¢ Industrial Switching
â€¢ Motor Control Inverter

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Mfr. Part #: NGTB25N120LWG