wholesale NPT1012B RF JFET Transistors supplier,manufacturer,distributor

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NPT1012B

RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN

  • RF JFET Transistors
  • NPT1012B
  • MACOM
  • Tray
  • NPT1012B Datasheet
  • In Stock
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Mfr. Part #: NPT1012B

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  • Specifications

Specifications

Manufacturer MACOM
RoHS
Transistor Type HEMT
Technology GaN-on-Si
Operating Frequency 4 GHz
Gain 13 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 100 V
Vgs - Gate-Source Breakdown Voltage 3 V
Id - Continuous Drain Current 4 mA
Maximum Operating Temperature + 200 C
Pd - Power Dissipation 44 W
Mounting Style Screw Mount
Packaging Tray
RF & Wireless RF JFET Transistors
Configuration Single
Brand MACOM
P1dB - Compression Point 43 dBm
Product Type RF JFET Transistors
Rds On - Drain-Source Resistance 440 mOhms
Standard Pack Qty 30
Subcategory Transistors
Vgs th - Gate-Source Threshold Voltage - 1.8 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NPT1012B. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: NPT1012B

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