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NPTB00004A

RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT

Product Category: Transistors RF
Mfr. Part #
NPTB00004A
Manufacturer: MACOM
Package: Tray
Lead Free Status /RoHS Status:
Data Sheet: NPTB00004A Datasheet
Inventory: In Stock

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Mfr. Part #: NPTB00004A

Specifications

Specifications

Manufacturer MACOM

Transistor Type HEMT

Technology GaN-on-Si

Operating Frequency 6 GHz

Gain 16 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 100 V

Id - Continuous Drain Current 1.4 A

Maximum Operating Temperature + 200 C

Pd - Power Dissipation 11.6 W

Mounting Style SMD/SMT

Package / Case SOIC-8

Packaging Tray

RF & Wireless RF JFET Transistors

Brand MACOM

Moisture Sensitive Yes

Product Type RF JFET Transistors

Rds On - Drain-Source Resistance 1.6 Ohms

Standard Pack Qty 95

Subcategory Transistors

Vgs th - Gate-Source Threshold Voltage - 1.6 V

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Mfr. Part #: NPTB00004A