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NXH020U90MNF2PTG

Discrete Semiconductor Modules SiC Modules, Vienna Module 900V, 2 x 10 mohm SiC MOSFET, 1200V, 2 x 100A, F2 Package

Product Category: Discrete Semiconductor Modules
Mfr. Part #
NXH020U90MNF2PTG
Manufacturer: onsemi
Package: Tray
Lead Free Status /RoHS Status:
Data Sheet: NXH020U90MNF2PTG Datasheet
Inventory: In Stock

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Mfr. Part #: NXH020U90MNF2PTG

Specifications

Specifications

Manufacturer onsemi

Product Power MOSFET Modules

Type SiC MOSFET Module

Technology SiC

Vf - Forward Voltage 2.3 V

Vr - Reverse Voltage 1.2 kV

Vgs - Gate-Source Voltage - 8 V, 18 V

Mounting Style Press Fit

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Series NXH020U90MNF2

Packaging Tray

Configuration Dual Common Source

Brand onsemi

Transistor Polarity N-Channel

Fall Time 12.8 ns

Id - Continuous Drain Current 149 A

Pd - Power Dissipation 352 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 14 mOhms

Rise Time 19.8 ns

Standard Pack Qty 20

Subcategory Discrete Semiconductor Modules

Typical Turn-Off Delay Time 110 ns

Typical Turn-On Delay Time 43.2 ns

Vds - Drain-Source Breakdown Voltage 900 V

Vgs th - Gate-Source Threshold Voltage 4.3 V

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Mfr. Part #: NXH020U90MNF2PTG