wholesale NXH450B100H4Q2F2SG IGBT Modules supplier,manufacturer,distributor

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H450B100H4Q2F2SG

IGBT Modules Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode Solder pins

  • IGBT Modules
  • NXH450B100H4Q2F2SG
  • onsemi
  • Tray
  • NXH450B100H4Q2F2SG Datasheet
  • In Stock
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Mfr. Part #: NXH450B100H4Q2F2SG

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  • Specifications

Specifications

Manufacturer onsemi
Product IGBT Silicon Carbide Modules
Configuration Dual
Collector- Emitter Voltage VCEO Max 1 kV
Collector-Emitter Saturation Voltage 1.7 V
Continuous Collector Current at 25 C 101 A
Gate-Emitter Leakage Current 800 nA
Pd - Power Dissipation 234 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Brand onsemi
Product Type IGBT Modules
Standard Pack Qty 12
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the H450B100H4Q2F2SG. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: NXH450B100H4Q2F2SG

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