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PD54008L-E

RF MOSFET Transistors POWER RF Transistor

Product Category: Transistors RF
Mfr. Part #
PD54008L-E
Manufacturer: STMicroelectronics
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: PD54008L-E Datasheet
Inventory: In Stock

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Mfr. Part #: PD54008L-E

Specifications
Product Details

Specifications

Manufacturer STMicroelectronics

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 5 A

Vds - Drain-Source Breakdown Voltage 25 V

Rds On - Drain-Source Resistance -

Operating Frequency 1 GHz

Gain 15 dB

Output Power 8 W

Minimum Operating Temperature - 65 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case PowerFLAT (5x5)

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Configuration Single

Series PD54008L-E

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand STMicroelectronics

Channel Mode Enhancement

Moisture Sensitive Yes

Pd - Power Dissipation 26.7 W

Product Type RF MOSFET Transistors

Standard Pack Qty 3000

Subcategory MOSFETs

Vgs - Gate-Source Voltage 15 V

Product Details

Description

The PD54008L-E is a common source N-Channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLATâ„¢.

Features

â– Excellent thermal stability
â– Common source configuration
â– Broadband performances POUT = 8W with 15 dB gain @ 500MHz
â– New leadless plastic package
â– EDS protection
â– Supplied in tape & reel of 3K units
â– In compliance with the 2002/93/EC european directive

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Please send inquiry, we will respond immediately.

Mfr. Part #: PD54008L-E