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PD84008L-E

RF FET 13 dB at 870 MHz + 150 C SMD/SMT 1 GHz PowerFLAT (5x5) Si N-Channel 25 V

  • RF FETs
  • PD84008L-E
  • STMicroelectronics
  • 8-PowerVDFN
  • PD84008L-E Datasheet
  • In Stock
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Mfr. Part #: PD84008L-E

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  • Specifications
  • Product Details

Specifications

Manufacturer STMicroelectronics
Product Category RF FETs
Series PD84008L-E
Type RF Power MOSFET
Packaging Reel
Mounting-Style SMD/SMT
Package-Case PowerFLAT (5x5)
Technology Si
Gain 13 dB at 870 MHz
Output-Power 8 W
Pd-Power-Dissipation 26.7 W
Maximum Operating Temperature + 150 C
Operating temperature range - 65 C
Operating-Frequency 1 GHz
Vgs-Gate-Source-Voltage 15 V
ID (drain current) 7 A
Vds-Drain-Source-Breakdown-Voltage 25 V
Transistor-Polarity N-Channel

Product Details

Description

The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT™.

Features

â–  Excellent thermal stability
â–  Common source configuration
â–  POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
â–  Plastic package
â–  ESD protection
â–  In compliance with the 2002/95/EC european directive

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the PD84008L-E. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: PD84008L-E

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