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PD84010-E
RF FET 14.3 dB at 870 MHz + 150 C SMD/SMT 1 GHz PowerSO-10RF (Formed Lead)-4 Si N-Channel 40 V
- Product Category: RF FETs
- Mfr. Part # PD84010-E
- Manufacturer: STMicroelectronics
- Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Lead Free Status /RoHS Status:
- Data Sheet: PD84010-E Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: PD84010-E
- Product Details
Product Details
Description
The PD84010-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD84010-E’s superior linearity performance makes it an ideal solution for portable radio applications.The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Features
â– Excellent thermal stabilityâ– Common source configuration
â– POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V
â– Plastic package
â– ESD protection
â– In compliance with the 2002/95/EC European directive
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the PD84010-E. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: PD84010-E
