PF28.0W

Introduction

This document contains the specifications for the Intel® Advanced+ Boot Block Flash Memory (C3) Stacked Chip Scale Package (SCSP) device. C3 SCSP memory solutions are offered in the following combinations:
• 32-Mbit flash + 8-Mbit SRAM
• 32-Mbit flash + 4-Mbit SRAM
• 16-Mbit flash + 4-Mbit SRAM
• 16-Mbit flash memory + 2-Mbit SRAM

Product Overview

The C3 SCSP device combines flash memory and SRAM into a single package, which provides secure low-voltage memory solutions for portable applications.
The flash memory provides the following features:
• Enhanced security.
• Instant locking/unlocking of any flash block with zero-latency
• A 128-bit protection register that enables unique device identification,
to meet the needs ofnext generation portable applications.
• Improved 12 V production programming for increased factory throughput.

Product Features

â–  Flash Memory Plus SRAM
—Reduces Memory Board Space
Required, Simplifying PCB Design
Complexity
â–  SCSP Technology
—Smallest Memory Subsystem Footprint
—Area : 8 x 10 mm for 16 Mbit (0.13 µm)
Flash + 2 Mbit or 4 Mbit SRAM
—Area : 8 x 12 mm for 32 Mbit (0.13 µm)
Flash + 4 Mbit or 8 Mbit SRAM
—Height : 1.20 mm for 16 Mbit (0.13 µm)
Flash + 2 Mbit or 4 Mbit SRAM, and 32
Mbit (0.13um) Flash + 8 Mbit SRAM
—Height : 1.40 mm for 32 Mbit (0.13 µm)
Flash + 4 Mbit SRAM
—This Family also includes 0.25 µm, 0.18
µm, and 0.13 µm technologies
â–  Advanced SRAM Technology
—70 ns Access Time
—Low Power Operation
—Low Voltage Data Retention Mode
■ Intel® Flash Data Integrator (FDI) Software
—Real-Time Data Storage and Code
Execution in the Same Memory Device
—Full Flash File Manager Capability
â–  Advanced+ Boot Block Flash Memory
—70 ns Access Time
—Instant, Individual Block Locking
—128 bit Protection Register
—12 V Production Programming
—Fast Program and Erase Suspend
—Extended Temperature –25 °C to +85 °C
â–  Blocking Architecture
—Block Sizes for Code + Data Storage
—4-Kword Parameter Blocks
—64-Kbyte Main Blocks
—100,000 Erase Cycles per Block
â–  Low Power Operation
—Asynchronous Read Current: 9 mA (Flash)
—Standby Current: 7 µA (Flash)
—Automatic Power Saving Mode
â–  Flash Technologies
—0.25 µm ETOX™ VI, 0.18 µm ETOX™
VII and 0.13 µm ETOX™ VIII Flash
Technologies