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PN5179

RF BJT 50mA 2GHz 15dB Through Hole 350mW TO-92-3 NPN 12V

Product Category: RF Transistors (BJT)
Mfr. Part #
PN5179
Manufacturer: onsemi
Package: TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status /RoHS Status:
Data Sheet: PN5179 Datasheet
Inventory: In Stock

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Mfr. Part #: PN5179

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category RF Transistors (BJT)

Series -

Packaging Bulk

Package-Case TO-226-3, TO-92-3 (TO-226AA)

Mounting-Type Through Hole

Supplier-Device-Package TO-92-3

Power-Max 350mW

Transistor-Type NPN

Electric current collectors 50mA

Voltage-Collector-Emitter-Breakdown-Max 12V

DC-Current-Gain-hFE-Min-Ic-Vce 25 @ 3mA, 1V

Frequency-Transition 2GHz

Noise-Figure-dB-Typ-f 5dB @ 200MHz

Gain 15dB

Product Details

This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 ÂµA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

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Mfr. Part #: PN5179