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PTF180101S V1
IC FET RF LDMOS 10W H-32259-2
- Product Category: RF FETs
- Mfr. Part # PTF180101S V1
- Manufacturer: Infineon
- Package: H32259-2
- Lead Free Status /RoHS Status:
- Data Sheet: PTF180101S V1 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: PTF180101S V1
- Specifications
- Product Details
Specifications
Product Details
Description
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallizationensures excellent device lifetime and reliability.
Features
• Typical EDGE performance- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
• Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
• Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
• Integrated ESD protection:
Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the PTF180101S V1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: PTF180101S V1
