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QPD1000SR

RF JFET Transistors .03-1.215GHz,15W,28V GaN RF I/P-Mtchd T

Product Category: Transistors RF
Mfr. Part #
QPD1000SR
Manufacturer: Qorvo
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: QPD1000SR Datasheet
Inventory: In Stock

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Mfr. Part #: QPD1000SR

Specifications

Specifications

Manufacturer Qorvo

Transistor Type HEMT

Technology GaN

Operating Frequency 30 MHz to 1.215 GHz

Gain 19 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 100 V

Id - Continuous Drain Current 3 A

Output Power 24 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Pd - Power Dissipation 32.4 W

Mounting Style SMD/SMT

Package / Case QFN-8

Packaging Reel

RF & Wireless RF JFET Transistors

Application Military Radar, Jammers

Configuration Single

Series QPD1000

Brand Qorvo

Moisture Sensitive Yes

Product Type RF JFET Transistors

Standard Pack Qty 100

Subcategory Transistors

Vgs th - Gate-Source Threshold Voltage - 7 V, 2 V

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Mfr. Part #: QPD1000SR