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QPD1003

RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN

Product Category: Transistors RF
Mfr. Part #
QPD1003
Manufacturer: Qorvo
Package: Tray
Lead Free Status /RoHS Status:
Data Sheet: QPD1003 Datasheet
Inventory: In Stock

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Mfr. Part #: QPD1003

Specifications

Specifications

Manufacturer Qorvo

Transistor Type HEMT

Technology GaN-on-SiC

Operating Frequency 1.2 GHz to 1.4 GHz

Gain 19.9 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 50 V

Vgs - Gate-Source Breakdown Voltage 145 V

Id - Continuous Drain Current 15 A

Output Power 540 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Pd - Power Dissipation 370 W

Mounting Style SMD/SMT

Package / Case RF-565

Packaging Tray

RF & Wireless RF JFET Transistors

Configuration Single

Operating Temperature Range - 40 C to + 85 C

Series QPD1003

Brand Qorvo

Development Kit QPD1003PCB401

Moisture Sensitive Yes

Product Type RF JFET Transistors

Standard Pack Qty 18

Subcategory Transistors

Vgs th - Gate-Source Threshold Voltage - 2.8 V

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Mfr. Part #: QPD1003