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QPD1006

RF JFET Transistors 450W 50V 1.2-1.4GHz GaN IMFET

  • Transistors RF
  • QPD1006
  • Qorvo
  • QPD1006 Datasheet
  • In Stock
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Mfr. Part #: QPD1006

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 1.2 GHz to 1.4 GHz
Gain 17.8 dB
Transistor Polarity N-Channel
Id - Continuous Drain Current 14 A
Output Power 450 W
Maximum Drain Gate Voltage 145 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 445 W
Mounting Style SMD/SMT
Package / Case NI-50CW
RF & Wireless RF JFET Transistors
Application Civilian and Military Radar
Configuration Single
Series QPD1006
Brand Qorvo
Development Kit QPD1006EVB3
Moisture Sensitive Yes
Product Type RF JFET Transistors
Standard Pack Qty 36
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the QPD1006. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: QPD1006

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