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QPD1008L

RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

Product Category: Transistors RF
Mfr. Part #
QPD1008L
Manufacturer: Qorvo
Package: Tray
Lead Free Status /RoHS Status:
Data Sheet: QPD1008L Datasheet
Inventory: In Stock

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Mfr. Part #: QPD1008L

Specifications

Specifications

Manufacturer Qorvo

Transistor Type HEMT

Technology GaN-on-SiC

Operating Frequency 3.2 GHz

Gain 17.5 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 50 V

Vgs - Gate-Source Breakdown Voltage 145 V

Id - Continuous Drain Current 4 A

Output Power 162 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Pd - Power Dissipation 127 W

Mounting Style Screw Mount

Package / Case NI-360

Packaging Tray

RF & Wireless RF JFET Transistors

Configuration Single

Operating Temperature Range - 40 C to + 85 C

Series QPD1008L

Brand Qorvo

Development Kit QPD1008LPCB401

Moisture Sensitive Yes

Product Type RF JFET Transistors

Standard Pack Qty 25

Subcategory Transistors

Vgs th - Gate-Source Threshold Voltage - 2.8 V

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Mfr. Part #: QPD1008L