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QPD1009

RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

Product Category: Transistors RF
Mfr. Part #
QPD1009
Manufacturer: Qorvo
Package: Tray
Lead Free Status /RoHS Status:
Data Sheet: QPD1009 Datasheet
Inventory: In Stock

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Mfr. Part #: QPD1009

Specifications

Specifications

Manufacturer Qorvo

Transistor Type HEMT

Technology GaN-on-SiC

Operating Frequency 4 GHz

Gain 24 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 50 V

Vgs - Gate-Source Breakdown Voltage 145 V

Id - Continuous Drain Current 700 mA

Output Power 17 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Pd - Power Dissipation 17.5 W

Mounting Style SMD/SMT

Package / Case QFN-16

Packaging Tray

RF & Wireless RF JFET Transistors

Configuration Single

Operating Temperature Range - 40 C to + 85 C

Series QPD1009

Brand Qorvo

Development Kit QPD1009-EVB1

Moisture Sensitive Yes

Product Type RF JFET Transistors

Standard Pack Qty 50

Subcategory Transistors

Vgs th - Gate-Source Threshold Voltage - 2.8 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: QPD1009