wholesale QPD1010 Transistors RF supplier,manufacturer,distributor

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QPD1010

RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

  • Transistors RF
  • QPD1010
  • Qorvo
  • Waffle
  • QPD1010 Datasheet
  • In Stock
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Mfr. Part #: QPD1010

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 4 GHz
Gain 24.7 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 50 V
Vgs - Gate-Source Breakdown Voltage 145 V
Id - Continuous Drain Current 400 mA
Output Power 11 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 13.5 W
Mounting Style SMD/SMT
Package / Case QFN-16
Packaging Waffle
RF & Wireless RF JFET Transistors
Configuration Single
Operating Temperature Range - 40 C to + 85 C
Series QPD1010
Brand Qorvo
Development Kit QPD1010-EVB1
Moisture Sensitive Yes
Product Type RF JFET Transistors
Standard Pack Qty 50
Subcategory Transistors
Vgs th - Gate-Source Threshold Voltage - 2.8 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the QPD1010. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: QPD1010

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