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QPD1011SR

RF JFET Transistors .03-1.2GHz 7W 50V GaN

Product Category: Transistors RF
Mfr. Part #
QPD1011SR
Manufacturer: Qorvo
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: QPD1011SR Datasheet
Inventory: In Stock

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Mfr. Part #: QPD1011SR

Specifications

Specifications

Manufacturer Qorvo

Transistor Type HEMT

Technology GaN-on-SiC

Operating Frequency 30 MHz to 1.2 GHz

Gain 21 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 50 V

Vgs - Gate-Source Breakdown Voltage 145 V

Id - Continuous Drain Current 1.46 A

Output Power 8.7 W

Maximum Drain Gate Voltage 55 V

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Pd - Power Dissipation 13 W

Mounting Style SMD/SMT

Package / Case SMD-8

Packaging Reel

RF & Wireless RF JFET Transistors

Series QPD1011

Brand Qorvo

Forward Transconductance - Min -

Development Kit QPD1011EVB01

Moisture Sensitive Yes

Product Type RF JFET Transistors

Standard Pack Qty 100

Subcategory Transistors

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Mfr. Part #: QPD1011SR