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QPD1013SR

RF JFET Transistors DC-2.7GHz 150W PAE 64.8%

Product Category: Transistors RF
Mfr. Part #
QPD1013SR
Manufacturer: Qorvo
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: QPD1013SR Datasheet
Inventory: In Stock

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Mfr. Part #: QPD1013SR

Specifications

Specifications

Manufacturer Qorvo

Transistor Type HEMT

Technology GaN-on-SiC

Operating Frequency 1.2 GHz to 2.7 GHz

Gain 21.8 dB

Transistor Polarity N-Channel

Id - Continuous Drain Current 1.7 A

Output Power 178 W

Maximum Drain Gate Voltage 65 V

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Pd - Power Dissipation 67 W

Mounting Style SMD/SMT

Package / Case DFN-6

Packaging Reel

RF & Wireless RF JFET Transistors

Application Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications

Configuration Single Triple Drain

Series QPD1013

Brand Qorvo

Development Kit QPD1013EVB01

Moisture Sensitive Yes

Product Type RF JFET Transistors

Standard Pack Qty 100

Subcategory Transistors

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Mfr. Part #: QPD1013SR