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QPD1018

RF JFET Transistors 2.7-3.1 GHz, 500W,50V,GaN RF IMFET

Product Category: Transistors RF
Mfr. Part #
QPD1018
Manufacturer: Qorvo
Lead Free Status /RoHS Status:
Data Sheet: QPD1018 Datasheet
Inventory: In Stock

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Mfr. Part #: QPD1018

Specifications

Specifications

Manufacturer Qorvo

Transistor Type HEMT

Technology GaN-on-SiC

Operating Frequency 2.7 GHz to 3.1 GHz

Gain 17.7 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 145 V

Vgs - Gate-Source Breakdown Voltage - 7 V to 2 V

Id - Continuous Drain Current 15 A

Maximum Drain Gate Voltage 55 V

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Pd - Power Dissipation 522 W

Mounting Style SMD/SMT

Package / Case 17.4 mm x 24 mm x 4.31 mm

RF & Wireless RF JFET Transistors

Configuration Single

Series QPD1018

Brand Qorvo

Development Kit QPD1018EVB

Moisture Sensitive Yes

Product Type RF JFET Transistors

Standard Pack Qty 18

Subcategory Transistors

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Mfr. Part #: QPD1018