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QPD1019

RF JFET Transistors 2.9-3.3 GHz, 500W, 50V, GaN RF IMFET

  • Transistors RF
  • QPD1019
  • Qorvo
  • QPD1019 Datasheet
  • In Stock
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Mfr. Part #: QPD1019

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 2.9 GHz to 3.3 GHz
Gain 16.3 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 150 V
Vgs - Gate-Source Breakdown Voltage - 7 V to 2 V
Id - Continuous Drain Current 15 A
Maximum Drain Gate Voltage 55 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 522 W
Mounting Style SMD/SMT
Package / Case 17.4 mm x 24 mm x 4.31 mm
RF & Wireless RF JFET Transistors
Configuration Single
Series QPD1019
Brand Qorvo
Development Kit QPD1019EVB01
Moisture Sensitive Yes
Product Type RF JFET Transistors
Standard Pack Qty 18
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the QPD1019. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: QPD1019

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