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QPD1022TR7

RF MOSFET Transistors DC-12 GHz, 10W, 32V GaN RF Tr

  • Transistors RF
  • QPD1022TR7
  • Qorvo
  • In Stock
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Mfr. Part #: QPD1022TR7

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  • Specifications

Specifications

Manufacturer Qorvo
Transistor Polarity N-Channel
Technology GaN SiC
Id - Continuous Drain Current 610 mA
Vds - Drain-Source Breakdown Voltage 100 V
Operating Frequency DC to 12 GHz
Gain 24 dB
Output Power 11 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Mounting Style SMD/SMT
Package / Case QFN-16
RF & Wireless RF MOSFET Transistors
Type RF Power MOSFET
Brand Qorvo
Number of Channels 1 Channel
Pd - Power Dissipation 17.5 W
Product Type RF MOSFET Transistors
Standard Pack Qty 1000
Subcategory MOSFETs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the QPD1022TR7. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: QPD1022TR7

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