wholesale QPD1025 Transistors RF supplier,manufacturer,distributor

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QPD1025

RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN

  • Transistors RF
  • QPD1025
  • Qorvo
  • Tray
  • QPD1025 Datasheet
  • In Stock
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Mfr. Part #: QPD1025

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Polarity Dual N-Channel
Technology GaN-on-SiC
Id - Continuous Drain Current 28 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance -
Operating Frequency 1 GHz to 1.1 GHz
Gain 22.5 dB
Output Power 1.862 kW
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Mounting Style Flange Mount
Package / Case NI-1230-4
Packaging Tray
RF & Wireless RF MOSFET Transistors
Series QPD1025
Type RF Power MOSFET
Brand Qorvo
Number of Channels 2 Channel
Moisture Sensitive Yes
Pd - Power Dissipation 685 W
Product Type RF MOSFET Transistors
Standard Pack Qty 18
Subcategory MOSFETs
Vgs - Gate-Source Voltage - 2.8 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the QPD1025. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: QPD1025

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