wholesale QPD1025L Transistors RF supplier,manufacturer,distributor

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QPD1025L

RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

  • Transistors RF
  • QPD1025L
  • Qorvo
  • Tray
  • QPD1025L Datasheet
  • In Stock
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Mfr. Part #: QPD1025L

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 1 GHz to 1.1 GHz
Gain 22.9 dB
Id - Continuous Drain Current 28 A
Output Power 1.5 kW
Maximum Drain Gate Voltage 225 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 758 W
Mounting Style SMD/SMT
Package / Case NI-1230-4
Packaging Tray
RF & Wireless RF JFET Transistors
Application Avionics, IFF Transponders
Configuration Dual Gate Dual Drain
Series QPD1025L
Brand Qorvo
Development Kit QPD1025LEVB1
Moisture Sensitive Yes
Product Type RF JFET Transistors
Standard Pack Qty 18
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the QPD1025L. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: QPD1025L

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