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QPD1425L

RF MOSFET Transistors 1.2-1.4 GHz discrete

  • Transistors RF
  • QPD1425L
  • Qorvo
  • QPD1425L Datasheet
  • In Stock
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Mfr. Part #: QPD1425L

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Polarity P-Channel
Technology GaN-on-SiC
Id - Continuous Drain Current 19 A
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 2 GHz
Gain 20.6 dB
Output Power 56.3 dBm
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Mounting Style Flange Mount
Package / Case NI-400
RF & Wireless RF MOSFET Transistors
Brand Qorvo
Moisture Sensitive Yes
Product Type RF MOSFET Transistors
Subcategory MOSFETs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the QPD1425L. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: QPD1425L

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