wholesale QPD2793 Transistors RF supplier,manufacturer,distributor

Image is for illustrative purposes only. Please refer to product description.

QPD2793

RF JFET Transistors 2.62-2.69GHz GaN 200W 48V

  • Transistors RF
  • QPD2793
  • Qorvo
  • Tray
  • QPD2793 Datasheet
  • In Stock
  • Unit Price:
    Inquiry
  • Quantity:
    -
    +

Please send inquiry,we will respond immediately.

Mfr. Part #: QPD2793

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product
  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 2.62 GHz to 2.69 GHz
Gain 19 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage -
Vgs - Gate-Source Breakdown Voltage -
Id - Continuous Drain Current -
Output Power 200 W
Maximum Drain Gate Voltage -
Minimum Operating Temperature - 40 C
Pd - Power Dissipation -
Mounting Style SMD/SMT
Package / Case NI400-2
Packaging Tray
RF & Wireless RF JFET Transistors
Application Microcell Base Station, W-CDMA / LTE
Configuration Single
Series QPD2793
Brand Qorvo
Forward Transconductance - Min -
Product Type RF JFET Transistors
Standard Pack Qty 25
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the QPD2793. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

READ MORE

Please send inquiry, we will respond immediately.

Mfr. Part #: QPD2793

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.

PayPalWestern UnionUPSDHLFedExEMSTNTaramex