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RF2L15200CB4

RF MOSFET Transistors 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor

  • Transistors RF
  • RF2L15200CB4
  • STMicroelectronics
  • Reel
  • RF2L15200CB4 Datasheet
  • In Stock
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Mfr. Part #: RF2L15200CB4

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Transistor Polarity Dual N-Channel
Technology Si
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 1 Ohms
Operating Frequency 860 MHz
Gain 17.5 dB
Output Power 200 W
Maximum Operating Temperature + 200 C
Mounting Style SMD/SMT
Package / Case LBB-5
Packaging Reel
RF & Wireless RF MOSFET Transistors
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand STMicroelectronics
Number of Channels 2 Channel
Moisture Sensitive Yes
Product Type RF MOSFET Transistors
Standard Pack Qty 100
Subcategory MOSFETs
Vgs - Gate-Source Voltage - 6 V to 10 V
Vgs th - Gate-Source Threshold Voltage 2.5 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RF2L15200CB4. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RF2L15200CB4

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