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RF2L16180CB4

RF MOSFET Transistors 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

Product Category: Transistors RF
Mfr. Part #
RF2L16180CB4
Manufacturer: STMicroelectronics
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: RF2L16180CB4 Datasheet
Inventory: In Stock

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Mfr. Part #: RF2L16180CB4

Specifications

Specifications

Manufacturer STMicroelectronics

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 2.5 A

Vds - Drain-Source Breakdown Voltage 65 V

Rds On - Drain-Source Resistance 1 Ohms

Operating Frequency 1.6 GHz

Gain 14 dB

Output Power 180 W

Minimum Operating Temperature -

Maximum Operating Temperature + 200 C

Mounting Style SMD/SMT

Package / Case B4E-5

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand STMicroelectronics

Number of Channels 1 Channel

Product Type RF MOSFET Transistors

Standard Pack Qty 120

Subcategory MOSFETs

Vgs - Gate-Source Voltage 10 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

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Mfr. Part #: RF2L16180CB4