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RFM04U6PTE12LF

RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 2A 7W 16V

  • Transistors RF
  • RFM04U6P(TE12L,F)
  • Toshiba
  • Cut Tape/Reel
  • RFM04U6P(TE12L,F) Datasheet
  • In Stock
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Mfr. Part #: RFM04U6P(TE12L,F)

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 2 A
Vds - Drain-Source Breakdown Voltage 16 V
Rds On - Drain-Source Resistance -
Operating Frequency 470 MHz
Gain 13.3 dB
Output Power 4.3 W
Minimum Operating Temperature -
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case PW-Mini-3
Packaging Cut Tape
Packaging Reel
RF & Wireless RF MOSFET Transistors
Configuration Single
Series RFM04
Type RF Power MOSFET
Brand Toshiba
Pd - Power Dissipation 7 W
Product Type RF MOSFET Transistors
Standard Pack Qty 1000
Subcategory MOSFETs
Vgs - Gate-Source Voltage 3 V
Vgs th - Gate-Source Threshold Voltage 700 mV

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RFM04U6PTE12LF. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: RFM04U6P(TE12L,F)

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