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RFM12U7XTE12LQ

RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V

  • Transistors RF
  • RFM12U7X(TE12L,Q)
  • Toshiba
  • Reel
  • RFM12U7X(TE12L,Q) Datasheet
  • In Stock
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Mfr. Part #: RFM12U7X(TE12L,Q)

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 4 A
Vds - Drain-Source Breakdown Voltage 20 V
Operating Frequency 520 MHz
Gain 10.8 dB
Output Power 12 W
Mounting Style SMD/SMT
Package / Case PW-X-4
Packaging Reel
RF & Wireless RF MOSFET Transistors
Configuration Single
Series RFM12
Type RF Power MOSFET
Brand Toshiba
Pd - Power Dissipation 20 W
Product Type RF MOSFET Transistors
Standard Pack Qty 1000
Subcategory MOSFETs
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 1 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RFM12U7XTE12LQ. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RFM12U7X(TE12L,Q)

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