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RGS60TS65DHRC11

IGBT Transistors 650V 30A Field Stop Trench IGBT. ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Product Category: IGBT Transistors
Mfr. Part #
RGS60TS65DHRC11
Manufacturer: ROHM Semiconductor
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: RGS60TS65DHRC11 Datasheet
Inventory: In Stock

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Mfr. Part #: RGS60TS65DHRC11

Specifications

Specifications

Manufacturer ROHM Semiconductor

Technology Si

Package / Case TO-247N-3

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 650 V

Collector-Emitter Saturation Voltage 1.65 V

Maximum Gate Emitter Voltage - 30 V, 30 V

Continuous Collector Current at 25 C 56 A

Pd - Power Dissipation 223 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 175 C

Qualification AEC-Q101

Packaging Tube

Brand ROHM Semiconductor

Gate-Emitter Leakage Current 200 nA

Product Type IGBT Transistors

Standard Pack Qty 30

Subcategory IGBTs

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Mfr. Part #: RGS60TS65DHRC11