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RGS80TSX2DGC11

IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Built-In FRD, Field Stop Trench IGBT

  • IGBT Transistors
  • RGS80TSX2DGC11
  • ROHM Semiconductor
  • Tube
  • RGS80TSX2DGC11 Datasheet
  • In Stock
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Mfr. Part #: RGS80TSX2DGC11

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  • Specifications

Specifications

Manufacturer ROHM Semiconductor
RoHS
Technology Si
Package / Case TO-247N-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.7 V
Maximum Gate Emitter Voltage - 30 V, 30 V
Continuous Collector Current at 25 C 80 A
Pd - Power Dissipation 555 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 80 A
Brand ROHM Semiconductor
Gate-Emitter Leakage Current 500 nA
Product Type IGBT Transistors
Standard Pack Qty 30
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RGS80TSX2DGC11. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RGS80TSX2DGC11

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