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RGT40NS65DGC9

IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Product Category: IGBT Transistors
Mfr. Part #
RGT40NS65DGC9
Manufacturer: ROHM Semiconductor
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: RGT40NS65DGC9 Datasheet
Inventory: In Stock

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Mfr. Part #: RGT40NS65DGC9

Specifications

Specifications

Manufacturer ROHM Semiconductor

Technology Si

Package / Case TO-262-3

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 650 V

Collector-Emitter Saturation Voltage 1.65 V

Maximum Gate Emitter Voltage - 20 V, 20 V

Continuous Collector Current at 25 C 40 A

Pd - Power Dissipation 161 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 175 C

Packaging Tube

Brand ROHM Semiconductor

Gate-Emitter Leakage Current 200 nA

Product Type IGBT Transistors

Standard Pack Qty 50

Subcategory IGBTs

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Mfr. Part #: RGT40NS65DGC9