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RGTH50TS65DGC13

IGBT Transistors High-Speed Switching Type, 650V 30A, Built in FRD, TO-247N, Field Stop Trench IGBT

Product Category: IGBT Transistors
Mfr. Part #
RGTH50TS65DGC13
Manufacturer: ROHM Semiconductor
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: RGTH50TS65DGC13 Datasheet
Inventory: In Stock

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Mfr. Part #: RGTH50TS65DGC13

Specifications

Specifications

Manufacturer ROHM Semiconductor

Technology Si

Package / Case TO-247GE-3

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 650 V

Collector-Emitter Saturation Voltage 2.1 V

Maximum Gate Emitter Voltage - 30 V, 30 V

Continuous Collector Current at 25 C 50 A

Pd - Power Dissipation 174 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 175 C

Packaging Tube

Continuous Collector Current Ic Max 100 A

Brand ROHM Semiconductor

Gate-Emitter Leakage Current 200 nA

Product Type IGBT Transistors

Standard Pack Qty 30

Subcategory IGBTs

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Mfr. Part #: RGTH50TS65DGC13