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RGW60TS65GC11

IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT

  • IGBT Transistors
  • RGW60TS65GC11
  • ROHM Semiconductor
  • Tube
  • RGW60TS65GC11 Datasheet
  • In Stock
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Mfr. Part #: RGW60TS65GC11

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  • Specifications

Specifications

Manufacturer ROHM Semiconductor
RoHS
Technology Si
Package / Case TO-247N-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.5 V
Maximum Gate Emitter Voltage - 30 V, 30 V
Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 178 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 60 A
Brand ROHM Semiconductor
Gate-Emitter Leakage Current 200 nA
Product Type IGBT Transistors
Standard Pack Qty 1
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RGW60TS65GC11. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RGW60TS65GC11

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