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RJP65T54DPM-A0T2

IGBT Transistors IGBT - 650V/30A/TO-3PFP

  • IGBT Transistors
  • RJP65T54DPM-A0#T2
  • Renesas Electronics
  • Tube
  • In Stock
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Mfr. Part #: RJP65T54DPM-A0#T2

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  • Specifications

Specifications

Manufacturer Renesas Electronics
RoHS
Technology Si
Package / Case TO-3PFP
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.35 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 63.5 W
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 30 A
Brand Renesas Electronics
Gate-Emitter Leakage Current 1 uA
Product Type IGBT Transistors
Standard Pack Qty 25
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RJP65T54DPM-A0T2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RJP65T54DPM-A0#T2

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