wholesale RM2N650LD-T MOSFET supplier,manufacturer,distributor

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RM2N650LD-T

MOSFET D-PAK MOSFET

  • MOSFET
  • RM2N650LD-T
  • Rectron
  • Reel
  • RM2N650LD-T Datasheet
  • In Stock
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Mfr. Part #: RM2N650LD-T

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  • Specifications

Specifications

Manufacturer Rectron
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 2 A
Rds On - Drain-Source Resistance 2.5 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 10 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 23 W
Channel Mode Enhancement
Packaging Reel
Configuration Single
Transistor Type 1 N-Channel
Brand Rectron
Forward Transconductance - Min 2 S
Fall Time 11 ns
Product Type MOSFET
Rise Time 3 ns
Standard Pack Qty 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 65 ns
Typical Turn-On Delay Time 6 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RM2N650LD-T. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: RM2N650LD-T

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